As specified in our exclusive report, the Global Gallium Nitride Semiconductor Devices Market is projected to reach USD 26.1 billion by 2030.
The advantages, such as faster device speed, higher energy efficiency, and lower cost offered by GaN semiconductor devices over silicon semiconductor devices such as smartphones, computers, TVs, and cameras, are likely to see the market progress.
One of the major trends observed in the market is the rise of 5G technology. This new technology for mobile cellular networks is changing the wireless communications sector. There is a huge demand for wireless data bandwidth due to the increasing consumption of mobile data, which is putting enormous pressure on the network for the availability of wireless spectrum.
The growing demand for energy-efficient GaN devices and power semiconductors in wired communications is expected to drive market growth. This growth is attributed to the expansion of the telecommunications domain as various Internet service providers are majorly focusing on providing high-capacity, universal connectivity and low-latency networks with optical cable wiring.
Who is the Target Audience?
Which Region Holds the Highest Share?
Asia-Pacific is all set to dominate the market during the forecast period. It is an important factor driving the growth of the regional market. Rising defense budgets in countries such as China, India, and South Korea have resulted in increased demand for robust communication equipment, which is expected to drive demand for GaN-based RF equipment.
Some of the key players in the gallium nitride semiconductor devices market are:
The competitive scenario of the gallium nitride semiconductor devices market is shaped by product innovation and strategic mergers and acquisitions. Front runners are pushing for capacity addition and global footprint expansion to take advantage of attractive prospects in developing economies.
Qorvo, Infineon, Samsung, Mitsubishi Electric, Efficient Power Conversion (EPC), Cree, Microsemi, Analog Devices, Macom, Panasonic, Sumitomo Electric, Texas Instruments, GaN Systems, Nichia, Northrop Grumman Corporation, Dialog Semiconductor, Epistar.